Single- and Multi-junction devices up to 115 W
75 μm, 150 μm and 225 μm source size
3.2 W/A efficiency / Proven InGaAs
GaAs high reliability structure
High power structure for narrow far field
Excellent temperature stability
Hermetic 5.6 mm CD and custom designed package
Ultra-precise mechanical tolerances
Available with built-in monitoring photodiode (UAP-suffix) and short pins (UAS-suffix)
Fully RoHS compliant